 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25C Case Temperature B TO-220 PACKAGE (TOP VIEW) 1 2 3 4 A Continuous Collector Current Minimum hFE of 750 at 3V, 1.5 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDW53 BDW53A Collector-base voltage (IE = 0) BDW53B BDW53C BDW53D BDW53 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) BDW53B BDW53C BDW53D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEBO IC IB Ptot Ptot 1/2LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ C C C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW53 V(BR)CEO Collector-emitter breakdown voltage BDW53A IC = 30 mA IB = 0 (see Note 5) BDW53B BDW53C BDW53D VCE = 30 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 40 V VCE = 50 V VCE = 60 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V ICBO Collector cut-off current VCB = 120 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = IB = IE = 5V 3V 3V 3V 30 mA 40 mA 4A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 1.5 A IC = 4A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 2.5 2.5 4 3.5 V V V TC = 150C TC = 150C TC = 150C TC = 150C TC = 150C BDW53 BDW53A BDW53B BDW53C BDW53D BDW53 BDW53A BDW53B BDW53C BDW53D BDW53 BDW53A BDW53B BDW53C BDW53D MIN 45 60 80 100 120 0.5 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 0.2 5 5 5 5 5 2 20000 mA mA mA V TYP MAX UNIT IC = 1.5 A IC = 1.5 A IC = IB = 0 4A NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.125 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 2 A VBE(off) = -5 V IB(on) = 8 mA RL = 15 MIN IB(off) = -8 mA tp = 20 s, dc 2% TYP 1 4.5 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 20000 10000 hFE - Typical DC Current Gain TCS110AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 TCS110AB TC = -40C TC = 25C TC = 100C 1*0 1000 0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 5*0 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 5*0 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS110AC 2*5 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 5*0 Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAS110AC IC - Collector Current - A 1*0 0*1 BDW53 BDW53A BDW53B BDW53C BDW53D 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 60 Ptot - Maximum Power Dissipation - W TIS110AB 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP |
Price & Availability of BDW53D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |